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HVC190
Silicon Epitaxial Planar PIN Diode for Attenuator
REJ03G0441-0200 Rev.2.00 Oct 08, 2009
Features
* Low capacitance. (C=0.35pF max) * Low forward resistance (rf=3.0 typ.) * Ultra small Flat lead Package (UFP) is suitable for surface mount design.
Ordering Information
Part No HVC190 TRF HVC190 KRF Laser Mark H9 Package Name UFP Package Code PWSF0002ZA-A Taping Abbreviation (Quantity) TRF (4,000 pcs / reel) KRF (8,000 pcs / reel)
Pin Arrangement
Cathode mark Mark 1
H9
2 1. Cathode 2. Anode
REJ03G0441-0200 Rev.2.00 Oct 08, 2009 Page 1 of 4
HVC190
Absolute Maximum Ratings
(Ta = 25C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 50 50 150 150 -55 to +150 Unit V mA mA C C
Electrical Characteristics
(Ta = 25C)
Item Forward voltage Reverse current Capacitance Forward resistance ESD-Capability * Note: 1.
1
Symbol VF IR C rf
Min -- -- -- -- 200
Typ -- -- -- 3.0
Max 1.0 100 0.35 5.0
Unit V nA pF V
Test Condition IF = 50 mA VR = 50 V VR = 50 V, f = 1 MHz IF = 10 mA, f = 100 MHz C = 200 pF, Both forward and reverse direction 1 pulse
Failure criterion ; IR 200 nA at VR = 50 V
REJ03G0441-0200 Rev.2.00 Oct 08, 2009 Page 2 of 4
HVC190
Main Characteristics
10-1 10-7 10-8 10
Forward current IF (A)
-3
10-5
Reverse current IR (A)
10-9 10-10 10-11 10-12 10-13
10-7
10-9
10-11
0
0.2
0.4
0.6
0.8
1.0
10-14
0
10
20
30
40
50
Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage
Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage
10 f=1MHz
104 f = 100MHz
1.0
Forward resistance rf ()
103
Capacitance C (pF)
102
0.1
10
0.01 0.1
1.0
10
100
1.0 -4 10
10-3
10-2
10-1
Reverse voltage VR (V) Fig.3 Capacitance vs. Reverse voltage
Forward current IF (A) Fig.4 Forward resistance vs. Forward current
REJ03G0441-0200 Rev.2.00 Oct 08, 2009 Page 3 of 4
HVC190
Package Dimensions
Package Name UFP JEITA Package Code SC-79 RENESAS Code PWSF0002ZA-A Previous Code UFP / UFPV MASS[Typ.] 0.0016g
D b
E
HE
c
l1 e1 A l1 b2
Reference Symbol Dimension in Millimeters
Pattern of terminal position areas
A b c D E HE b2 e1 l1
Min 0.50 0.25 0.08 0.70 1.10 1.50
Nom 0.60 0.30 0.13 0.80 1.20 1.60 0.80 1.70 0.60
Max 0.70 0.35 0.18 0.90 1.30 1.70
REJ03G0441-0200 Rev.2.00 Oct 08, 2009 Page 4 of 4
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Colophon .7.2

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